Part Number Hot Search : 
1514S093 ADC8001 3EAS1 P4KE56A TP12N SZ3511 M5817 D780018
Product Description
Full Text Search
 

To Download SSF4604-15 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  www.goodark.com page 1 of 4 rev.1.0 ssf4604 30v complementary mosfet package marking and ordering information device marking device device package reel size tape width quantity 4604 ssf4604 sop-8 ?330mm 12mm 2500 units absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol n-channel p-channel unit drain-source voltage v ds 30 -30 v gate-source voltage v gs 20 20 v t a =25 6.9 -5 continuous drain current t a =70 i d 6.0 -4.0 a pulsed drain current (note 1) i dm 30 -20 a t a =25 2.0 2.0 maximum power dissipation t a =70 p d 1.35 1.44 w operating junction and storage temperature range t j ,t stg -55 to 150 -55 to 150 thermal characteristics n-ch 62.5 thermal resistance,junction-to-ambient (note2) r ja p-ch 62.5 /w electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics g 2 s 2 g 1 s 1 4 321 d 2d 2d 1d 1 567 8 4 6 0 4 general features n-channel v ds = 30v,i d = 6.9a r ds(on) < 44m @ v gs =4.5v r ds(on) < 28m @ v gs =10v p-channel v ds = -30v,i d = -5a r ds(on) < 87m @ v gs =-4.5v r ds(on) < 52m @ v gs =-10v high power and current handing capability lead free product surface mount package marking and p in assignment sop - 8 t op v iew schematic d iagram description the ssf4604 uses advanced trench technology mosfet to provide excellent r ds(on) and low gate charge. the complementary mosfet may be used in power inverters, and other applications. n-channel p-channel
www.goodark.com page 2 of 4 rev.1.0 ssf4604 30v complementary mosfet v gs =0v i d =250a n-ch 30 drain-source breakdown voltage bv dss v gs =0v i d =-250a p-ch -30 v v ds =24v,v gs =0v n-ch 1 zero gate voltage drain current i dss v ds =-24v,v gs =0v p-ch -1 a n-ch 100 gate-body leakage current i gss v gs =20v,v ds =0v p-ch 100 na on characteristics (note 3) v ds =v gs ,i d =250a n-ch 1 1.9 3 gate threshold voltage v gs(th) v ds =v gs ,i d =-250a p-ch -1 -1.8 -3 v v gs =10v, i d =6.9a n-ch 22.5 28 v gs =-10v, i d =-5.0a p-ch 46 52 v gs =4.5v, i d =5a n-ch 40 44 drain-source on-state resistance r ds(on) v gs =-4.5v, i d =-4a p-ch 65 87 m v ds =5v,i d =6.9a n-ch 10 15.4 forward transconductance g fs v ds =-5v,i d =-5a p-ch 6 8.6 s dynamic parameters n-ch 680 input capacitance c lss p-ch 700 n-ch 100 output capacitance c oss p-ch 120 n-ch 77 reverse transfer capacitance c rss n-ch v gs =0v, v ds =15v, f=1mhz p-ch v gs =0v, v ds =-15v, f=1mhz p-ch 75 pf switching characteristics (note 4) n-ch 4.6 turn-on delay time t d(on) p-ch 8.3 ns n-ch 4.1 turn-on rise time t r p-ch 5 ns n-ch 20.6 turn-off delay time t d(off) p-ch 29 ns n-ch 5.2 turn-off fall time t f n-ch v dd =15v, r l =2.2 v gen =10v,r gen =3 p-ch v dd =-15v, r l =3 v gen =-10v,r gen =3 p-ch 14 ns n-ch 14 total gate charge q g p-ch 14.5 nc n-ch 1.8 gate-source charge q gs p-ch 2 nc n-ch 3.2 gate-drain charge q gd n-ch v ds =15v,i d =6.9a, v gs =10v p-ch v ds =-15v,i d =-5a, v gs =-10v p-ch 3.8 nc
www.goodark.com page 3 of 4 rev.1.0 ssf4604 30v complementary mosfet drain-source diode characteristics v gs =0v,i s =1a n-ch 0.76 1 v diode forward voltage (note 3) v sd v gs =0v,i s =-1a p-ch -0.77 -1 v notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300s, duty cycle 2%. 4. guaranteed by design, not subject to production testing. n-channel thermal characteristics square wave pluse duration(sec) figure 1: normalized maximum transient thermal impedance p-channel thermal characteristics square wave pluse duration(sec) figure 2: normalized maximum transient thermal impedance r(t),normalized effective transient thermal impedance r(t),normalized effective transient thermal impedance
www.goodark.com page 4 of 4 rev.1.0 ssf4604 30v complementary mosfet sop-8 package information dimensions in millimeters (unit: mm) notes 1. all dimensions are in millimeters. 2. dimensions are inclusive of plating 3. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 6 mils. 4. dimension l is measured in gauge plane. 5. controlling dimension is millimeter, converted inch dimensions are not necessarily exact


▲Up To Search▲   

 
Price & Availability of SSF4604-15

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X